BAT54WS L9

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diodes BAT54WS SOD-323 Schottky Barrier Diode FEATURES z Extremely Fast Switching Speed z Low Forward Voltage MARKING: L9 Maximum Ratings @Ta=25℃ Parameter Symbol Limit Unit Non-Repetitive Peak Reverse Voltage VRM 30 V DC Blocking Voltage VR 21 V Average Rectified Output Current IO 100 mA Forward Continuous Current IF 200 mA Repetitive Peak Forward Current IFRM 300 mA Forward Surge Current IFSM 600 mA Power Dissipation PD 200 mW RθJA 500 ℃/W Junction Temperature TJ 125 ℃ Storage Temperature Range TSTG Thermal Resistance Junction to Ambient -55~+150 ℃ Electrical Characteristics @Ta=25℃ Parameter Symbol Conditions Min V (BR) IR=100μA 30 VF1 IF=0.1mA 240 mV VF2 IF=1.0mA 320 mV VF3 IF=10mA 400 mV VF4 IF=30mA 500 mV VF5 IF=100mA 1000 mV Reverse current IR VR=25V 2.0 uA Reverse recovery time trr 5.0 ns Capacitance between terminals CT 10 pF Reverse breakdown voltage Forward voltage IF=10mA, IR=10mA to 1mA , RL=100Ω VR=1V,f=1MHz Typ Max Unit V C,Feb,2014 Typical Characteristics BAT54WS Reverse Characteristics Forward Characteristics 100 200 Pulsed Pulsed (uA) T= a 2 5℃ FORWARD CURRENT 10 REVERSE CURRENT IR a T IF =1 00 ℃ (mA) 100 1 0.1 Ta=100℃ 10 1 Ta=25℃ 0.1 0.01 0 200 400 FORWARD VOLTAGE 600 VF 800 0 (mV) 5 10 15 20 REVERSE VOLTAGE 25 VR 30 (V) Power Derating Curve Capacitance Characteristics 20 250 (mW) f=1MHz 200 PD 16 12 POWER DISSIPATION CAPACITANCE BETWEEN TERMINALS CT (pF) Ta=25℃ 8 4 0 150 100 50 0 0 5 10 REVERSE VOLTAGE 15 VR (V) 20 0 25 50 75 AMBIENT TEMPERATURE 100 Ta 125 (℃) C,Feb,2014